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| savantic semiconductor product specification silicon pnp power transistors 2SB645 description with to-3 package high power dissipation applications for power switching and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -200 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -5 a p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB645 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -3.0 v i cbo collector cut-off current v cb =-200v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-5v 40 140 f t transition frequency i c =-0.5a ; v ce =-10v 12 mhz h fe classifications r o 40-80 70-140 savantic semiconductor product specification 3 silicon pnp power transistors 2SB645 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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